10-Gb/s external modulator module using capacitive and inductive peaking technology

Bo Pan; Jianjun Gao; Baoxin Gao

doi:10.1117/12.444575

16 October 2001 10-Gb/s external modulator module using capacitive and inductive peaking technology

Bo Pan, Jianjun Gao, Baoxin Gao

Proceedings Volume 4603, Fiber Optics and Optoelectronics for Network Applications; (2001) https://doi.org/10.1117/12.444575
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54GHz to 35GHz.

Citation Download Citation

Bo Pan, Jianjun Gao, and Baoxin Gao "10-Gb/s external modulator module using capacitive and inductive peaking technology", Proc. SPIE 4603, Fiber Optics and Optoelectronics for Network Applications, (16 October 2001); https://doi.org/10.1117/12.444575

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