A detailed study is carried out on four oxygen-rich silicon oxynitride samples as an as-deposited one and other three same ones annealed at 600 degree(s), 750 degree(s) and 900 degree(s) respectively by Infrared spectroscopy (IR) and X-photoelectron spectroscopy (XPS). It is shown that the as-deposited sample consists of configurations as SiNx (xequals1,2,3,4), OnSi$4--n)-NH (nequals0,1,2,3), Si-O4, Si-OH, N-OH, SiN-O and SiNequalsO. With the annealing temperature rising, other configurations diminish or disappear and thus the microstructure mainly consists of O3Si-NH and Si-O4. As the temperature steps higher to 900 degree(s), most of H is released, leading to the appearance of a great amount of O3SiN- with a N dangling bonding, thus a sharp increase in the inner stress, and the reappearance of SiN-O, SiNequalsO and SiN configurations helps to compensate the inner stress.
|