Paper
1 August 2002 Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation
Alexandra Barberet, Peter D. Buck, Gilles L. Fanget, Olivier Toublan, Jean-Charles Richoilley, Michel Tissier
Author Affiliations +
Abstract
We develop a Mask Process Correction (MPC) set of tools in collaboration with DuPont Photomasks, Mentor Graphics and CEA-LETI. The MPC project consists of 3 modules.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Barberet, Peter D. Buck, Gilles L. Fanget, Olivier Toublan, Jean-Charles Richoilley, and Michel Tissier "Adjustment of optical proximity correction (OPC) software for mask process correction (MPC): Module 2. Lithography simulation based on optical mask writing tool simulation", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476988
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Optical proximity correction

Scanning electron microscopy

Semiconducting wafers

Databases

Data modeling

Lithography

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