Paper
11 July 2002 40-Gb/s and beyond for LiNbO3 modulators
Shinichi Shimotsu, Robert W. Smith, Rangaraj Madabhushi
Author Affiliations +
Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475521
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States
Abstract
This paper discusses an intensity modulator for current 40G applications with a bandwidth exceeding 35GHz and a drive voltage of less than 5Vp-p (2.5V differential) at 1GHz. This device has also achieved an S11 of less than -13dB up to 35GHz, -10dB for 35-50GHz. We will discuss with some results for wider bandwidth.
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Shinichi Shimotsu, Robert W. Smith, and Rangaraj Madabhushi "40-Gb/s and beyond for LiNbO3 modulators", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); https://doi.org/10.1117/12.475521
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KEYWORDS
Modulators

Electrodes

Signal attenuation

Modulation

Packaging

Telecommunications

Lithium niobate

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