Integrated photodiodes in standard BiCMOS technology

Johannes Sturm; Simon Hainz; Gernot Langguth; Horst Zimmermann

doi:10.1117/12.474798

17 June 2003 Integrated photodiodes in standard BiCMOS technology

Johannes Sturm, Simon Hainz, Gernot Langguth, Horst Zimmermann

Proceedings Volume 4989, Optical Devices for Fiber Communication IV; (2003) https://doi.org/10.1117/12.474798
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Photodiode structures were integrated in a low cost 0.5 μm silicon BiCMOS process using standard process flow without any technology modification. Rise times of 1.3ns and 1.4ns were measured for wavelengths λ of 660nm and 780nm with a responsivity of 0.23 A/W and 0.14 A/W, respectively. Photodiodes with a high responsivity of 0.42 A/W are reaching a risetime of 4ns for λ = 780nm. Comparable low values for the risetime at 780nm are reported in the literature for integrated photodiodes in standard silicon technologies only with a modification of the epitaxial substrate material. So this photodiodes are suitable for a wide variety of low-cost high-speed optical sensor applications, for optical fiber communication and fiber in home applications.

Citation Download Citation

Johannes Sturm, Simon Hainz, Gernot Langguth, and Horst Zimmermann "Integrated photodiodes in standard BiCMOS technology", Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); https://doi.org/10.1117/12.474798

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