Paper
30 May 2003 Nonlinear optical dynamics in GaN and related materials
Amane Shikanai, Kouji Hazu, Takayuki Sota, Katsuo Suzuki, Yoichi Kawakami, Shigeo Fujita
Author Affiliations +
Abstract
The carrier dynamics in InGaN layers and InGaN multiquantum-well (MQW) structures were studied by employing the degenerate pump and probe, time-resolved photoluminescence (PL), and white-light pump and probe measurements. The results from degenerate pump and probe measurements showed that the internal field existed in undoped in InGaN but then was screened by the electrons supplied by the Si atoms in Si-doped InGaN. The rise time of Pl in InGaN MQW obtained using the upconversion method was very fast, below 1ps, the mechanism of which is due to the carrier-carrier interaction enhanced by the residual electrons. The ΔOD spectra in InGaN MQW observed in white-light pump and probe measurements indicated that the carrier temperature was substantially higher than the lattice temperature even at 40ps after pulsed photo-pumping.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Amane Shikanai, Kouji Hazu, Takayuki Sota, Katsuo Suzuki, Yoichi Kawakami, and Shigeo Fujita "Nonlinear optical dynamics in GaN and related materials", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.473276
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium gallium nitride

Luminescence

Gallium nitride

Transmittance

Electrons

Upconversion

Silicon

Back to Top