Degradation and transient currents in III-nitride LEDs

Yury T. Rebane; Natalia I. Bochkareva; Vladislav E. Bougrov; Dmitry V. Tarkhin; Yury G. Shreter; Eugeny A. Girnnov; Sergey I. Stepanov; Wang N. Wang; P. T. Chang; Pei Jih Wang

doi:10.1117/12.476553

3 July 2003 Degradation and transient currents in III-nitride LEDs

Yury T. Rebane, Natalia I. Bochkareva, Vladislav E. Bougrov, Dmitry V. Tarkhin, Yury G. Shreter, Eugeny A. Girnnov, Sergey I. Stepanov, Wang N. Wang, P. T. Chang, Pei Jih Wang

Author Affiliations +

Proceedings Volume 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII; (2003) https://doi.org/10.1117/12.476553
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The transient current time dependencies are non-exponential and show a distribution of relaxation times in the range of 1-100 microseconds. The charge associated with the transient currents is Q ~3x10^-10 C which corresponds to high number of carrier traps N_t ~ 2x10⁹ in the investigated chips. For one-year old chips an increase of charge and trap number by ~ 25% has been found compared to the fresh chips. Two probable reasons have been suggested to explain the observed increase of number of carrier traps: first one is related to increase of the number of trap sites at dislocations, and second one is a gradual phase separation process in quantum wells resulting in degradation of their quality.

Citation Download Citation

Yury T. Rebane, Natalia I. Bochkareva, Vladislav E. Bougrov, Dmitry V. Tarkhin, Yury G. Shreter, Eugeny A. Girnnov, Sergey I. Stepanov, Wang N. Wang, P. T. Chang, and Pei Jih Wang "Degradation and transient currents in III-nitride LEDs", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.476553

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available