The properties of Schottky-barrier photodiodes based on Cd<sub>x</sub>Hg<sub>1-x</sub>Te with tunnel transparent dielectric

V. Damnjanovic; V. P. Ponomarenko

doi:10.1117/12.517319

30 September 2003 The properties of Schottky-barrier photodiodes based on Cd_xHg_1-xTe with tunnel transparent dielectric

V. Damnjanovic, V. P. Ponomarenko

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517319
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The results are presented on the basis of characteristics of p-type CdHgTe (CMT) diodes with metal-tunnel transparent dielectric - semiconductor (MTTD photodiodes) in the 8-11 μm spectral range.

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V. Damnjanovic and V. P. Ponomarenko "The properties of Schottky-barrier photodiodes based on Cd_xHg_1-xTe with tunnel transparent dielectric", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517319

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