Paper
8 December 2003 InP-based waveguide photodetector with integrated photon multiplication
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Abstract
We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donato Pasquariello, Joachim Piprek, Daniel Lasaosa, and John E. Bowers "InP-based waveguide photodetector with integrated photon multiplication", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.510622
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Optical amplifiers

Gallium

Photodetectors

Waveguides

Cladding

Quantum wells

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