Paper
2 September 2003 Piezoresistive pressure sensors in CVD diamond for high-temperature applications
Ralf Otterbach, Ulrich Hilleringmann
Author Affiliations +
Proceedings Volume 5253, Fifth International Symposium on Instrumentation and Control Technology; (2003) https://doi.org/10.1117/12.521928
Event: Fifth International Symposium on Instrumentation and Control Technology, 2003, Beijing, China
Abstract
The fabrication of piezo-resistive pressure sensors for high temperature applications by the selective removal of CVD-diamond is limited due to the jutting physical properties of this material, which result in insufficient etching rates. A novel technique with distinctly increased etching rates due to a modified sample arrangement inside of a commercially available reactive ion etching (RIE) reactor overcomes this limitation by a restricted plasma volume. Rates up to 334 nm/min imply an increase of more than one order of magnitude in comparison with additional measurements utilizing a standard etching technique. Furthermore, the electrical response of a fabricated sensor on pressure is demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralf Otterbach and Ulrich Hilleringmann "Piezoresistive pressure sensors in CVD diamond for high-temperature applications", Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); https://doi.org/10.1117/12.521928
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KEYWORDS
Etching

Diamond

Sensors

Reactive ion etching

Plasma

Silicon

Protactinium

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