Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy

Yu. E. Gagarin; M. A. Stepovich

doi:10.1117/12.552218

1 March 2004 Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy

Yu. E. Gagarin, M. A. Stepovich

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Proceedings Volume 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2004) https://doi.org/10.1117/12.552218
Event: Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2003, Moscow, Russian Federation

Abstract

The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for direct-gap semiconductors at different measurands errors of electron beam energies characteristic of real experiment.

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Yu. E. Gagarin and M. A. Stepovich "Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy", Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); https://doi.org/10.1117/12.552218

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