The development of back-supportless CCDs and the wideband hybrid X-ray imager for the NeXT satellite

Shin-ichiro Takagi; Takeshi Go Tsuru; Hironori Matsumoto; Katsuji Koyama; Hiroshi Tsunemi; Emi Miyata; Satoshi Miyazaki; Yukiko Kamata; Kazuhisa Miyaguchi; Masaharu Muramatsu; Hisanori Suzuki

doi:10.1117/12.552514

29 September 2004 The development of back-supportless CCDs and the wideband hybrid x-ray imager for the NeXT satellite

Shin-ichiro Takagi, Takeshi Go Tsuru, Hironori Matsumoto, Katsuji Koyama, Hiroshi Tsunemi, Emi Miyata, Satoshi Miyazaki, Yukiko Kamata, Kazuhisa Miyaguchi , Masaharu Muramatsu, Hisanori Suzuki

Author Affiliations +

Proceedings Volume 5501, High-Energy Detectors in Astronomy; (2004) https://doi.org/10.1117/12.552514
Event: SPIE Astronomical Telescopes + Instrumentation, 2004, Glasgow, United Kingdom

Abstract

The NeXT (New X-ray Telescope) satellite to be launched around 2010, has a large effective area in the 0.1-80 keV band with the use of the multilayer super mirror. As the focal plane detector for NeXT, we have been developing the Wideband hybrid X-ray Imager (WXI) consisting of X-ray CCDs and a hard X-ray imager placed under X-ray CCDs. The X-ray CCD of WXI is required to (1) keep the high quantum efficiency up to the high energy band and (2) pass hard X-rays unabsorbed in the depletion (sensitive) layer. In order to meet these requirements, we have been developing the back supportless CCD which has the thick depletion layer, thinned Si wafer and back supportless structure. As the first step, we make the test model with thinned Si wafer in order to (1) learn the handling and thinning process and (2) confirm no change of the performance after the thinning process. The test model has the pixel number and size of 512 x 512 and 24 x 24 μm, respectively. We select the thickness of the wafer is about 200 μm considering the thinning process. We verify the depletion layer and the wafer of the test model are about 65 and 190 μm in thickness, respectively. The energy resolution is about 144 eV at 5.9 keV which is substantially comparable to the un-thinned CCD, hence we confirm our thinning process has no effect on the perfomance. In order to reduce the dead layer ompletely and increase the quantum efficiency at the high energy band, we are also developing the full depleted X-ray CCD with the high resistivity N-type Si wafer.

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Shin-ichiro Takagi, Takeshi Go Tsuru, Hironori Matsumoto, Katsuji Koyama, Hiroshi Tsunemi, Emi Miyata, Satoshi Miyazaki, Yukiko Kamata, Kazuhisa Miyaguchi , Masaharu Muramatsu, and Hisanori Suzuki "The development of back-supportless CCDs and the wideband hybrid x-ray imager for the NeXT satellite", Proc. SPIE 5501, High-Energy Detectors in Astronomy, (29 September 2004); https://doi.org/10.1117/12.552514

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KEYWORDS

Charge-coupled devices

Semiconducting wafers

X-rays

Sensors

X-ray imaging

Satellites

Silicon

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