The impact of high-k dielectrics in nanocrystal flash memories

Valder N. Freire; Jeanlex S. de Sousa

doi:10.1117/12.588362

25 March 2005 The impact of high-k dielectrics in nanocrystal flash memories

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.588362
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO₂ and SiO₂ for analysis. Due to significant reductions of the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.

Citation Download Citation

Valder N. Freire and Jeanlex S. de Sousa "The impact of high-k dielectrics in nanocrystal flash memories", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.588362

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