Comparative study on Al-doped ZnO films sputtered with ceramics and metal targets

Le-Xi Shao; Xiao-Ping Liu; Huey-Liang Hwang

doi:10.1117/12.607274

8 December 2004 Comparative study on Al-doped ZnO films sputtered with ceramics and metal targets

Le-Xi Shao, Xiao-Ping Liu, Huey-Liang Hwang

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607274
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

ZnO:Al thin films were deposited on glass and Si wafer substrates respectively by sputtering ceramics ZnO:Al2O3 and reactively sputtering metal Zn:Al targets for the purpose to find a suitable method for improving both conductivity and transparency of the film. The properties of the deposited films were investigated to determine the differences between the sputtered and reactive sputtered samples by using scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), UV-VIS spectrometer and electrical measurements. The results show that the films sputtered reactively with metal have a very high crystalline quality and transmittance in the visible light wave range, while the films sputtered with ceramics can obtain good conductivity and its crystalline structural quality can be improved largely by introducing oxygen into the deposition system.

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Le-Xi Shao, Xiao-Ping Liu, and Huey-Liang Hwang "Comparative study on Al-doped ZnO films sputtered with ceramics and metal targets", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607274

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