Paper
8 December 2004 Influence of process parameters on fabrication of PZT(53/47) thick films by a dip-coating process
Xiyun He, Yong Zhang, Pingsun Qiu, Aili Ding
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607370
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Crack-free polycrystalline PbZr0.53Ti0.47O3 (PZT(53/47) thick films (1~30μm) with peroviskite structure have been prepared from a dip-coating process. The influence of withdrawal speed and precursor solution concentration on the morphology of the films was examined. The effects of the substrate characteristics on the film phase structure and microstructure were investigated and evaluated. The ferroelectric and dielectric properties have been examined and discussed. PZT (53/47) thick films on Pt/Ti/SiO2 wafer and Pt/Ti foil substrates all exhibit excellent electric properties, Pr: 32~34 μmC/cm2; Ec: 32~35kV/cm, εr 900~940; tanδ: 0.02~0.04. These materials promise a good application in micro-devices including micro-pump, micro-actuator, etc.
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Xiyun He, Yong Zhang, Pingsun Qiu, and Aili Ding "Influence of process parameters on fabrication of PZT(53/47) thick films by a dip-coating process", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607370
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KEYWORDS
Ferroelectric materials

Dielectrics

Scanning electron microscopy

Semiconducting wafers

Ceramics

Electrodes

Platinum

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