Paper
31 May 2005 Demonstration of 256x256 dual-band QWIP infrared FPAs
Author Affiliations +
Abstract
CEA/LETI has been working for several years on the development of HgCdTe-based infrared dual band detectors [3]. Since 2001 CEA/LETI is also involved in a large program for the demonstration of dual band QWIP FPAs presenting large format and small pitch. This study is carried out with the QWIP team of THALES Research and Technology (TRT) in charge of QWIP design, MBE growth and GaAs processing for the detector side. As part of this program TRT investigated different quantum structures and pixel architectures for the realization of two-band FPAs for MWIR/LWIR and LWIR/LWIR applications. At the end of this study a choice of the most appropriate architecture was done. On its side, CEA/LETI designed readout circuits optimized for the selected dual-band QWIP. TRT delivered QWIP arrays and CEA/LETI proceeded to the assembly, integration and electro-optical characterization. The aim of this paper is to describe the architecture of these dual-band demonstrators and to present the first results concerning their electro-optical performances measured at 70K and 65K.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Castelein, F. Guellec, F. Rothan, S. Martin, P. Bois, E. Costard, O. Huet, X. Marcadet, and A. Nedelcu "Demonstration of 256x256 dual-band QWIP infrared FPAs", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.606430
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Cited by 11 scholarly publications.
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KEYWORDS
Quantum well infrared photodetectors

Long wavelength infrared

Mid-IR

Sensors

Niobium

Infrared radiation

Electro optics

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