Peculiar properties microstructure in H:LiNbO3 waveguide layers

D. I. Shevtsov; I. S. Azanova; I. F. Taysin; I. E. Kalabin; A. B. Volyntsev

doi:10.1117/12.634484

8 June 2005 Peculiar properties microstructure in H:LiNbO₃ waveguide layers

D. I. Shevtsov, I. S. Azanova, I. F. Taysin, I. E. Kalabin, A. B. Volyntsev

Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634484
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation

Abstract

The structural defects had been found on the surface of high-doped H:LiNbO₃ waveguide layers produced on X-cut LiNbO₃ substrates in pure benzoic acid at T ≥ 185°C during t>1 h. The defects are similar to "scratches" but oriented definitely in reference to Z crystal axis. Measured 3D and 2D profiles show the defects outspreading above the substrate surface at a height ~4.4-9.0 nm, having width a half height ~1.7 μm and length from ~2 μm up to 100-300 rim. Areas, where the density of these defects is increased, as a rule, are limited by scratch traces from lapping and polishing. Preliminary annealing of the substrates or Ti in-diffusion at temperature ~1000 °C before PE avoid the defect formation and the substrate roughness is not changed by proton exchange.

Citation Download Citation

D. I. Shevtsov, I. S. Azanova, I. F. Taysin, I. E. Kalabin, and A. B. Volyntsev "Peculiar properties microstructure in H:LiNbO₃ waveguide layers", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634484

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