Meta-stability effects in organic based transistors

H. L. Gomes; P. Stallinga; M. Murgia; F. Biscarini; T. Muck; V. Wagner; E. Smits; D. M. de Leeuw

doi:10.1117/12.617862

21 September 2005 Meta-stability effects in organic based transistors

H. L. Gomes, P. Stallinga, M. Murgia, F. Biscarini, T. Muck, V. Wagner, E. Smits, D. M. de Leeuw

Proceedings Volume 5940, Organic Field-Effect Transistors IV; 59400K (2005) https://doi.org/10.1117/12.617862
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The electrical stability of metal insulator semiconductor (MIS) capacitors and field effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.

Citation Download Citation

H. L. Gomes, P. Stallinga, M. Murgia, F. Biscarini, T. Muck, V. Wagner, E. Smits, and D. M. de Leeuw "Meta-stability effects in organic based transistors", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400K (21 September 2005); https://doi.org/10.1117/12.617862

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