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This paper provides a TCAD analysis of high performance SiGe heterostructure bipolar and MOSFET transistors
fabricated by SiGe BiCMOS technology. The bipolar and MOSFET devices characteristics are presented. High values of
operation frequencies, current gains and transconductances of the devices satisfy the requirements in RF mixed-signal IC
development for wired optical communication systems.
Konstantin O. Petrosjanc,Nikita I. Ryabov, andRostislav A. Torgovnikov
"SiGe HBT and SiGe MOSFET analysis for high-speed optical networks", Proc. SPIE 5944, Smart Imagers and Their Application, 594403 (6 December 2006); https://doi.org/10.1117/12.637771
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Konstantin O. Petrosjanc, Nikita I. Ryabov, Rostislav A. Torgovnikov, "SiGe HBT and SiGe MOSFET analysis for high-speed optical networks," Proc. SPIE 5944, Smart Imagers and Their Application, 594403 (6 December 2006); https://doi.org/10.1117/12.637771