Paper
5 October 2005 Role of phonon subsystems in second order optical effects in semiconductor semimagnetic Pb1-xRxX (R=Pr, Yb and X=S, Se, Te)
K. Nouneh, I. Kityk, S. Benet, R. Viennois, S. Charar, Z. Golacki
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Abstract
Measurements of transport and non-linear optical properties in magnetic semiconductors Pb1-xRxX (R=Pr, Yb and X=S, Se, Te at x≈1-3%) were performed to elucidate an influence of magnetic ions on behavior of the charge carriers. It was shown that nonlinear optical methods may be used as a sensitive tool for investigation of electron-phonon an harmonicity near the low temperature semiconductor isolator phase transformation. The presence of the minimum in Pb1-xPrxTe at about Tρmin = 50 K in the temperature dependence of the resistivity r(T) is due to metal-semiconductor transition. Particularly with increasing of electron-phonon interactions indicated by temperature dependent Debye term (parameter β), one can observe an increase of two-photon oscillator strengths.
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K. Nouneh, I. Kityk, S. Benet, R. Viennois, S. Charar, and Z. Golacki "Role of phonon subsystems in second order optical effects in semiconductor semimagnetic Pb1-xRxX (R=Pr, Yb and X=S, Se, Te)", Proc. SPIE 5949, Nonlinear Optics Applications, 59490W (5 October 2005); https://doi.org/10.1117/12.624596
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KEYWORDS
Lead

Tellurium

Ytterbium

Selenium

Oscillators

Phonons

Magnetic semiconductors

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