Paper
11 October 2005 Novel dual-mode locking semiconductor laser for millimetre-wave generation
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Abstract
In this work we present a new mode-locked device that can be used for millimeter-wave photonic applications. Such device presents for certain bias conditions a dual-mode behavior we have investigated for millimeter wave generation. Through the small signal analysis of the device, we have identified a resonance at the frequency separation of the longitudinal modes that has allowed us to demonstrate signal transmission at 40 GHz. The millimeter wave signal generated in detection is studied in terms of phase noise and the noise intrinsic to the emitter.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Acedo, C. Roda, H. Lamela, G. Carpintero, J. P. Vilcot, and S. Garidel "Novel dual-mode locking semiconductor laser for millimetre-wave generation", Proc. SPIE 5958, Lasers and Applications, 59580V (11 October 2005); https://doi.org/10.1117/12.624253
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Mode locking

Semiconductor lasers

Extremely high frequency

Interference (communication)

Signal generators

Modulation

Signal detection

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