Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

Nikolai Yarykin; Renhua Zhang; George Rozgonyi

doi:10.1117/12.683403

10 June 2006 Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

Nikolai Yarykin, Renhua Zhang, George Rozgonyi

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626017 (2006) https://doi.org/10.1117/12.683403
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The DLTS and admittance measurements were performed on the MOS and Schottky diodes formed on the strained-Si/SiGe/Si heterostructures. Several DLTS features were observed and analyzed, and properties of the peculiar Dl peak were studied in detail. Temperature dependence of the SiGe layer conductivity was extracted from the C(T) and G(T) curves. The analysis of ability of the DLTS technique to detect defects in the thin top layer is given.

Citation Download Citation

Nikolai Yarykin, Renhua Zhang, and George Rozgonyi "Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626017 (10 June 2006); https://doi.org/10.1117/12.683403

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