Linearity of the photocurrent response with light intensity for silicon <i>PIN</i> photodiode array

Ilja Goushcha; Bernd Tabbert; Alexander O. Goushcha

doi:10.1117/12.698022

9 February 2007 Linearity of the photocurrent response with light intensity for silicon PIN photodiode array

Ilja Goushcha, Bernd Tabbert, Alexander O. Goushcha

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 647111 (2007) https://doi.org/10.1117/12.698022
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The photosensitivity linearity of a back-illuminated, pin photodiode arrays built on 75-&mgr;m thick single silicon dies is discussed. Photosensitivity linearity measurements were performed in the range of input light fluxes above ~1nW/pixel and the linearity was found to be better than 0.01% within the spectral range from 450 to 1000 nm. For lower light fluxes, the non-linearity of the photo-sensitivity was smaller than the noise current of the array pixels and different methods should be applied to measure the photosensitivity linearity with an accuracy of better than 0.1%. The theoretical limits for the sensitivity linearity measurements are discussed. This work describes also the automatic probe system for opto-electrical testing of the front- and backside illuminated photodiode arrays. The system allows 100% testing of wafers and dies before die attach. The system is configured to work on wafers up to 150 mm in size or single multi-pixel dies.

Citation Download Citation

Ilja Goushcha, Bernd Tabbert, and Alexander O. Goushcha "Linearity of the photocurrent response with light intensity for silicon PIN photodiode array", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 647111 (9 February 2007); https://doi.org/10.1117/12.698022

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