Progress in cooled IR detectors and new developments

Philippe Tribolet; Michel Vuillermet

doi:10.1117/12.757703

24 January 2008 Progress in cooled IR detectors and new developments

Philippe Tribolet, Michel Vuillermet

Proceedings Volume 6835, Infrared Materials, Devices, and Applications; 68350N (2008) https://doi.org/10.1117/12.757703
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Cooled IR detectors are produced at mass production level at Sofradir for years based on its mature and proven HgCdTe technology. However, following the market needs, a lot of progress have been made and allow Sofradir to offer new product designs mainly dealing with the simplification of the detector use as well as reliability improvements. In addition to the conventional technologies used at mass production level, the Molecular Beam Epitaxy (MBE) approach has been under investigation for several years to prepare both the very large array fabrication and the new (3rd) generation developments. CEA-Leti, in cooperation with Sofradir, obtained very good results on 4-inches wafer size which confirms the mastering of this growth process. Very high qualities FPAs (1280×1024), with pitches as small as 15μm, were demonstrated as well as bicolor and dual band FPAs which use more complex multi hetero-junctions architectures. A very new development at CEA-Leti concerns avalanche photodiodes (APD) made with HgCdTe which presents a unique feature among all the over semiconductors: extremely high avalanche gains can be obtained on n on p photodiodes without absolutely any noise excess. These results open new interesting fields of investigation for low flux applications and fast detectors. The cooled IR detector field is progressing very rapidly and new developments will offer a lot of system simplification and enhancements.

Citation Download Citation

Philippe Tribolet and Michel Vuillermet "Progress in cooled IR detectors and new developments", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350N (24 January 2008); https://doi.org/10.1117/12.757703

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