Advanced damage-free photomask cleaning for 45/32nm technology nodes

Roman Gouk; Jason Jeon; Fred Li; James Papanu; Banqiu Wu; Rao Yalamanchili

doi:10.1117/12.793017

19 May 2008 Advanced damage-free photomask cleaning for 45/32nm technology nodes

Roman Gouk, Jason Jeon, Fred Li, James Papanu, Banqiu Wu, Rao Yalamanchili

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702808 (2008) https://doi.org/10.1117/12.793017
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

High particle removal efficiency (PRE) up to 99%+ without damage to sub-50 nm linewidth features has been demonstrated using a mixed fluid jet technology and sulfur-free chemistry. This high PRE was achieved with several types of deposited particles, including polystyrene latex spheres. Damage-free cleaning was demonstrated on binary and phase shift masks with Cr and MoSi structures. All masks were processed using the Tetra^TM mask cleaning tool configured with the NanoDroplet^TM mixed fluid jet technology.

Citation Download Citation

Roman Gouk, Jason Jeon, Fred Li, James Papanu, Banqiu Wu, and Rao Yalamanchili "Advanced damage-free photomask cleaning for 45/32nm technology nodes", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702808 (19 May 2008); https://doi.org/10.1117/12.793017

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