Image reversal trilayer materials and processing

David J. Abdallah; Kazunori Kurosawa; Elizabeth Wolfer; Victor Monreal; M. Dalil Rahman; DongKwan Lee; Mark Neisser; Ralph R. Dammel

doi:10.1117/12.837017

11 December 2009 Image reversal trilayer materials and processing

David J. Abdallah, Kazunori Kurosawa, Elizabeth Wolfer, Victor Monreal, M. Dalil Rahman, DongKwan Lee, Mark Neisser, Ralph R. Dammel

Author Affiliations +

Proceedings Volume 7520, Lithography Asia 2009; 75200L (2009) https://doi.org/10.1117/12.837017
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

Image reversal trilayer (IRT) combines three lithographic patterning enhancement approaches: image reversal, spin on hard masks, and shrink for recess types of features. With IRT, photoresist imaging is done directly on top of the carbon underlayer. Thick IRT-Carbon Hard Masks (CHM) films provide effective antireflection with high NA lithography and are more etch resistant than common photoresist. IRT-Silicon Hard Masks (SiHM) can be coated over the resist patterns in the lithography track. IRT etching reverses the resist pattern into the IRT-SiHM and transfers this image to the IRTCHM. The recessed patterns in the IRT-CHM are smaller than the CD of the photoresist feature from an inherent shrinking capability of the IRT-SiHM. Continuous improvements to both IRT-SiHM and IRT-CHM have been made. Silicon contents in IRT-SiHM have been pushed as high as possible while not impacting other important properties such as stability, coating quality and resist compatibility. Newer polysiloxane IRT-SiHM no longer require resist freezing prior to coating. Carbon contents in IRTCHM have been pushed as high as possible while maintaining solubility and a low absorption which is important when resist imaging is done directly on top of the IRT-CHM. Feasibility of this image reversal trilayer process was previously demonstrated on L/S and pillar gratings. Recent work focused on nonsymmetrical 2D gratings and simultaneous patterning of L/S gratings at different pattern densities. Particular emphasis is given to pattern density effects which are applicable to any top-coating image reversal process. This paper describes the lithography, pattern transfer process and 2nd generation hard mask materials developed for IRT processing.

Citation Download Citation

David J. Abdallah, Kazunori Kurosawa, Elizabeth Wolfer, Victor Monreal, M. Dalil Rahman, DongKwan Lee, Mark Neisser, and Ralph R. Dammel "Image reversal trilayer materials and processing", Proc. SPIE 7520, Lithography Asia 2009, 75200L (11 December 2009); https://doi.org/10.1117/12.837017

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Etching

Image processing

Photoresist materials

Photomasks

Carbon

Fourier transforms

Lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years