Electromigration theory and its applications to integrated circuit metallization

Tariel M. Makhviladze; Mikhail E. Sarychev

doi:10.1117/12.853391

26 February 2010 Electromigration theory and its applications to integrated circuit metallization

Tariel M. Makhviladze, Mikhail E. Sarychev

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752117 (2010) https://doi.org/10.1117/12.853391
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

The theory of electromigration-induced nano- and microprocesses that terminate in failure of thin-film conductors is given. These processes determine operational reliability of IC metallization system. The physical foundations of degradation and lifetime of interconnects are analyzed. The various mechanisms of their deformations and failures that are of practical importance for different types of multilevel arrangement and microstructure are studied. The full 3D theory developed considers the electromigration failures as a set of processes occurring at the nano-, micro- and mesoscale. We reduced the general equations in order to describe specific conducting systems, developed the methods of their numerical modeling, and created software packages. It allows carrying out the simulation of electromigration failures and performing the lifetime analysis for various interconnect systems that are of prime practical significance as regards the operation of IC metallization, the modeling being over a wide range of material, geometrical, structural, and operational parameters. Some examples of the reliability analysis and of the analysis of the most likely failure locations in dependence on the current density, parameters of multilevel metallization, temperature, and polycrystalline grain microstructure of interconnects are represented. We also put forward an approach to modeling the electromigration in conductors containing impurities.

Citation Download Citation

Tariel M. Makhviladze and Mikhail E. Sarychev "Electromigration theory and its applications to integrated circuit metallization", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752117 (26 February 2010); https://doi.org/10.1117/12.853391

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available