Paper
28 April 2010 Planar silicon SPADs with improved photon detection efficiency
Angelo Gulinatti, Francesco Panzeri, Ivan Rech, Piera Maccagnani, Massimo Ghioni, Sergio D. Cova
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Abstract
We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10μm thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angelo Gulinatti, Francesco Panzeri, Ivan Rech, Piera Maccagnani, Massimo Ghioni, and Sergio D. Cova "Planar silicon SPADs with improved photon detection efficiency", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810M (28 April 2010); https://doi.org/10.1117/12.849664
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Sensors

Photodetectors

Doping

Silicon

Absorption

Electric field sensors

Instrument modeling

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