We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and
transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and
Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at
doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity
measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS
lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope
efficiencies, and output powers.
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