Intersubband and intrasubband transition in InGaN quantum dot for solar cell application

Kuang-Chung Wang; Yuh-Renn Wu

doi:10.1117/12.908674

21 February 2012 Intersubband and intrasubband transition in InGaN quantum dot for solar cell application

Kuang-Chung Wang, Yuh-Renn Wu

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82561F (2012) https://doi.org/10.1117/12.908674
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

This paper studies the feasibility of using GaN/InGaN quantum dot as the Intermediate Band Solar Cell. Different dot sizes are compared and the result shows significant differences due to the quantum confinement strength. The band structure and transition rate in the quantum dot are calculated. For the smaller quantum dot, the efficiency is much higher because of the larger separation of IB band to conduction band. However, the contribution of intermediate bands is small and the bottle neck is found as the low transition rate between IBs and bulk state.

Citation Download Citation

Kuang-Chung Wang and Yuh-Renn Wu "Intersubband and intrasubband transition in InGaN quantum dot for solar cell application", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561F (21 February 2012); https://doi.org/10.1117/12.908674

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KEYWORDS

Quantum dots

Solar cells

Solar energy

Absorption

Indium

Indium gallium nitride

3D modeling

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