Structural evolution and electronic properties of [i]n[/i]-type doped hydrogenated amorphous silicon thin films

Jian He; Wei Li; Rui Xu; Kang-Cheng Qi; Ya-Dong Jiang

doi:10.1117/12.903747

17 December 2011 Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

Jian He, Wei Li, Rui Xu, Kang-Cheng Qi, Ya-Dong Jiang

Author Affiliations +

Proceedings Volume 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III; 831206 (2011) https://doi.org/10.1117/12.903747
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

Citation Download Citation

Jian He, Wei Li, Rui Xu, Kang-Cheng Qi, and Ya-Dong Jiang "Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films", Proc. SPIE 8312, Display, Solid-State Lighting, Photovoltaics, and Optoelectronics in Energy III, 831206 (17 December 2011); https://doi.org/10.1117/12.903747

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