Monte Carlo simulation of x-ray photoemission electron microscopic image

Z. M. Zhang; T. Tang; S. F. Mao; Z. J. Ding

doi:10.1117/12.2016301

29 May 2013 Monte Carlo simulation of x-ray photoemission electron microscopic image

Z. M. Zhang, T. Tang, S. F. Mao, Z. J. Ding

Proceedings Volume 8729, Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences; 87290L (2013) https://doi.org/10.1117/12.2016301
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

A new Monte Carlo method is built to describe the generation and transport processes of photoelectrons excited by incident X-ray. XPEEM images for Ag- and Au-dot array on substrate Si are simulated at different incident conditions by the Monte Carlo method. The trajectories of electrons scattered near dot sides and substrate surface were given to visualize the photoelectron penetrating processes. The simulated XPEEM images in TEY mode are found very close to the experimental observations.

Citation Download Citation

Z. M. Zhang, T. Tang, S. F. Mao, and Z. J. Ding "Monte Carlo simulation of x-ray photoemission electron microscopic image", Proc. SPIE 8729, Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences, 87290L (29 May 2013); https://doi.org/10.1117/12.2016301

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