Determination of carrier concentration in VECSEL lasers

Wojciech Jung; Agata Jasik; Krystyna Gołaszewska; Ewa Maciejewska

doi:10.1117/12.2030975

25 July 2013 Determination of carrier concentration in VECSEL lasers

Wojciech Jung, Agata Jasik, Krystyna Gołaszewska, Ewa Maciejewska

Proceedings Volume 8902, Electron Technology Conference 2013; 89021F (2013) https://doi.org/10.1117/12.2030975
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

For the growth of many high-quality photonic devices, especially surface emission lasers with a vertical resonance cavity (Vertical External Cavity Surface Emitting Laser, VECSEL) very important is to know the actual concentration of the carriers in each layer laser structure resulting from the presence of unintentional impurities. Studies of doping profile of this type multilayer structure can be carried out only by comparing the measured capacitance - voltage characteristics with the calculated theoretically. The paper presents results of research VECSEL structures with different numbers of quantum wells 4, 8, 12, 16, produced by molecular beam epitaxy. Measurements of the capacitance - voltage characteristics has been performed using mercury probe in the system for automatic measurement of C-V, I-V, G–V. The results of C-V measurements and numerical simulations have confirmed the possibility to control the level of unintentional impurities in the different layers of the laser VECSEL structure. The lowest concentrations of unintentional impurities were obtained for structures with highest power output.

Citation Download Citation

Wojciech Jung, Agata Jasik, Krystyna Gołaszewska, and Ewa Maciejewska "Determination of carrier concentration in VECSEL lasers ", Proc. SPIE 8902, Electron Technology Conference 2013, 89021F (25 July 2013); https://doi.org/10.1117/12.2030975

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