Scatterometry performance improvement by parameter and spectrum feed-forward

Jie Li; Shahin Zangooie; Karthik Boinapally; Xi Zou; Jiangtao Hu; Zhuan Liu; Sanjay Yedur; Peter Wilkens; Avraham Ver; Robert Cohen; Babak Khamsepour

doi:10.1117/12.2046639

2 April 2014 Scatterometry performance improvement by parameter and spectrum feed-forward

Jie Li, Shahin Zangooie, Karthik Boinapally, Xi Zou, Jiangtao Hu, Zhuan Liu, Sanjay Yedur, Peter Wilkens, Avraham Ver, Robert Cohen, Babak Khamsepour

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Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90502T (2014) https://doi.org/10.1117/12.2046639
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Optical critical dimension (OCD) metrology using scatterometry has been widely adopted for fast and non-destructive in-line process control and yield improvement. Recently there has been increased interest in metrology performance enhancement through a holistic approach. We investigate the benefits of feed-forward of metrology information from prior process steps using samples from magnetic hard disk drive manufacturing. The scatterometry targets are composed of rather isolated gratings that are designed to have better correlation with device features. Two gratings, one with pitch ≈ 10CD, and the other with pitch ≈ 15CD, are measured at post develop and post reactive ion etch (RIE) steps. Two methods: parameter feed-forward (PFF) and spectrum feedforward (SFF) are studied in which the measurement results or spectrum collected on the blanket target at photo step are fed forward to the measurements on the grating structures at post develop or post RIE step. Compared with standard measurement without FF, for the more isolated grating at photo step, both PFF and SFF improve CD correlation from R²=0.96 to R²=0.975 using CD-SEM results measured on device as the reference. Dynamic precision and fleet measurement precision are improved by 20-60%. For post RIE step, PFF and SFF significantly improve CD correlation from R²=0.95, slope=1.09 to R²=0.975, slope=1.03 for the denser grating, and from R²=0.90, slope=0.79 to R²=0.96, slope=0.96 for the more isolated grating. Dynamic precision is generally improved by 20-40%. It is observed that both PFF and SFF are equally efficient in reducing parameter correlation for the application studied here.

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Jie Li, Shahin Zangooie, Karthik Boinapally, Xi Zou, Jiangtao Hu, Zhuan Liu, Sanjay Yedur, Peter Wilkens, Avraham Ver, Robert Cohen, and Babak Khamsepour "Scatterometry performance improvement by parameter and spectrum feed-forward", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502T (2 April 2014); https://doi.org/10.1117/12.2046639

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KEYWORDS

Reactive ion etching

Scatterometry

Critical dimension metrology

Metrology

Magnetism

Manufacturing

Photomasks

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