High sensitivity background absorption measurements in semiconductors

Nathan Giannini; Junior R. Silva; Chengao Wang; Alexander R. Albrecht; Seth D. Melgaard; Mansoor Sheik-Bahae

doi:10.1117/12.2080087

10 March 2015 High sensitivity background absorption measurements in semiconductors

Nathan Giannini, Junior R. Silva, Chengao Wang, Alexander R. Albrecht, Seth D. Melgaard, Mansoor Sheik-Bahae

Proceedings Volume 9380, Laser Refrigeration of Solids VIII; 93800F (2015) https://doi.org/10.1117/12.2080087
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Laser cooling in InGaP|GaAs double heterostructures (DHS) has been a sought after goal. Even though very high external quantum efficiency (EQE) has been achieved, background absorption has remained a bottleneck in achieving net cooling. The purpose of this study is to gain more insight into the source of the background absorption for InGaP|GaAs DHS as well as GaAs|AlGaAs DBRs by employing an excite-probe thermal Z-scan measurement.

Citation Download Citation

Nathan Giannini, Junior R. Silva, Chengao Wang, Alexander R. Albrecht, Seth D. Melgaard, and Mansoor Sheik-Bahae "High sensitivity background absorption measurements in semiconductors", Proc. SPIE 9380, Laser Refrigeration of Solids VIII, 93800F (10 March 2015); https://doi.org/10.1117/12.2080087

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