Paper
18 March 2015 120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography
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Abstract
The new ArF Immersion Laser, GT64A has been developed to support the next generation multiple-patterning process. It offers the industry’s highest output power of 120W with high stability and efficiency. 120W output power with auto-adjusting function enables to meet the requirements of various processes and makes higher-throughput possible even at 450mm-wafers. The increased wavelength stability and bandwidth stability can further improve overlay accuracy and CD error required for the next generation multiple-patterning lithography. Advanced gas control algorithm reduces the consumption of rare gases such as neon to a half. Helium-free operation is also under development to cope with the unstable supply of helium gases worldwide.

New advanced wavelength control and bandwidth control algorithm has been developed to meet tighter stability requirement for the next generation multiple-patterning lithography.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Ohta, Keisuke Ishida, Takahito Kumazaki, Hiroaki Tsushima, Akihiko Kurosu, Kouji Kakizaki, Takashi Matsunaga, and Hakaru Mizoguchi "120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography", Proc. SPIE 9426, Optical Microlithography XXVIII, 94261J (18 March 2015); https://doi.org/10.1117/12.2085631
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KEYWORDS
Semiconducting wafers

Algorithm development

Lithography

Control systems

Laser development

Optical components

Laser stabilization

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