Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations

Xiuhuan Liu; Mingli Li; Zhanguo Chen; Gang Jia; Tianliang Bian; Yi Li

doi:10.1117/12.2180320

13 April 2015 Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations

Xiuhuan Liu, Mingli Li, Zhanguo Chen, Gang Jia, Tianliang Bian, Yi Li

Author Affiliations +

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 952220 (2015) https://doi.org/10.1117/12.2180320
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

The characteristics of photo-current-voltage and dark-current-voltage for two-photon-response semi-insulating GaAs photodetectors responding to near-infrared wavelengths of 1.31 μm and 1.55μm are investigated. The semi-insulating GaAs photodetectors were fabricated into hemisphere on whose bottom two types of electrodes were deposited. In experiments, the incident laser was adjusted to travel normally to the photodetector and focus at the center of the bottom so as to improve the nonlinear photo-responsivity markedly. It is observed that the photocurrent dependent on bias exhibits quadratic nonlinearity for both lasers and both electrode configurations, which reflects frequency-doubled absorption responsible for the physical mechanisms of the photodetectors; and the reasonable analysis demonstrates the important role of the electric-field-induced frequency-doubled absorption in two-photon response. Furthermore, it is found that the photocurrent is quite more greater when the electrode positioned at the bottom center of the photodetectors (central electrode for short) is negatively charged than that in the case of it positively charged under the conditions of the identical bias voltage and the same incident optical power; while the dark-current varies in exactly the opposite mode compared to the photocurrent. The aforementioned disparate variations of the photocurrent and the dark-current are well interpreted by the theory of surface band-bending of semi-insulating GaAs, and such variations result in a large ratio of photo-current to dark-current in the case of the central electrode negatively charged. The investigated results also indicate that the optimization of electrode structure is essential to improve the photo-responsivity of the photodetector.

Citation Download Citation

Xiuhuan Liu, Mingli Li, Zhanguo Chen, Gang Jia, Tianliang Bian, and Yi Li "Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952220 (13 April 2015); https://doi.org/10.1117/12.2180320

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Electrodes

Gallium arsenide

Photodetectors

Absorption

Chromium

Electroluminescence

Polarization

Show All Keywords

Keywords/Phrases

Search In:

Publication Years