Memristor memory element based on ZnO thin film structures

A. R. Poghosyan; E. Y. Elbakyan; R. Guo; R. K. Hovsepyan

doi:10.1117/12.2190111

26 August 2015 Memristor memory element based on ZnO thin film structures

A. R. Poghosyan, E. Y. Elbakyan, R. Guo, R. K. Hovsepyan

Proceedings Volume 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX; 95861C (2015) https://doi.org/10.1117/12.2190111
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

The memristor element for random access memory (resistance random access memory - ReRAM) was developed and investigated. The developed structure consists of a Schottky diode (1D) based on Pt/ZnO:Ga/ZnO/Pt heterostructure and a memristor (1R) based on Pt/ZnO:Ga/ZnO/ZnO:Li/Pt heterostructure. Thus the unipolar memristor memory element of 1D1R type was obtained. The heterostructures were produced by the electron-beam vacuum deposition method. The laboratory samples of the memory elements were prepared and their characteristics were studied. The proposed device has a high stability and withstands 1000 switching cycles without derating.

Citation Download Citation

A. R. Poghosyan, E. Y. Elbakyan, R. Guo, and R. K. Hovsepyan "Memristor memory element based on ZnO thin film structures", Proc. SPIE 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX, 95861C (26 August 2015); https://doi.org/10.1117/12.2190111

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