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7 March 2016 GaAs-based self-aligned stripe superluminescent diodes processed normal to the cleaved facet
O. M. S. Ghazal, D. Lei, D. T. Childs, B. J. Stevens, N. Babazadeh, R. A. Hogg, K. M. Groom
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 976706 (2016) https://doi.org/10.1117/12.2211062
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We demonstrate GaAs-based superluminescent diodes (SLDs) incorporating a window-like back facet in a self-aligned stripe. SLDs are realised with low spectral modulation depth (SMD) at high power spectral density, without application of anti-reflection coatings. Such application of a window-like facet reduces effective facet reflectivity in a broadband manner. We demonstrate 30mW output power in a narrow bandwidth with only 5% SMD, outline the design criteria for high power and low SMD, and describe the deviation from a linear dependence of SMD on output power as a result of Joule heating in SLDs under continuous wave current injection. Furthermore, SLDs processed normal to the facet demonstrate output powers as high as 20mW, offering improvements in beam quality, ease of packaging and use of real estate.
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O. M. S. Ghazal, D. Lei, D. T. Childs, B. J. Stevens, N. Babazadeh, R. A. Hogg, and K. M. Groom "GaAs-based self-aligned stripe superluminescent diodes processed normal to the cleaved facet", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976706 (7 March 2016); https://doi.org/10.1117/12.2211062
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KEYWORDS
Waveguides
Gallium arsenide
Electroluminescence
Absorption
Interfaces
Superluminescent diodes
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