Effects on hard x-ray response of a double-sided Si strip detector caused by interstrip surface charge

Katsuma Miyake; Shinya Saito; Toshio Nakano; Koichi Hagino; Shogo Benjamin Kobayashi; Kazufumi Okuda; Taketo Miura; Goro Sato; Shin Watanabe; Motohide Kokubun; Kazuhiro Nakazawa; Shinichiro Takeda; Hiroyasu Tajima; Yasushi Fukazawa; Tadayuki Takahashi

doi:10.1117/12.2240291

30 September 2016 Effects on hard x-ray response of a double-sided Si strip detector caused by interstrip surface charge

Katsuma Miyake, Shinya Saito, Toshio Nakano, Koichi Hagino, Shogo Benjamin Kobayashi, Kazufumi Okuda, Taketo Miura, Goro Sato, Shin Watanabe, Motohide Kokubun, Kazuhiro Nakazawa, Shinichiro Takeda, Hiroyasu Tajima, Yasushi Fukazawa, Tadayuki Takahashi

Author Affiliations +

Proceedings Volume 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII; 99680D (2016) https://doi.org/10.1117/12.2240291
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

We studied a surface effect of Double-sided Si Strip Detectors (DSSDs) in order to apply it for imaging spectroscopy of X-ray photons down to 5 keV for the first time. The Japanese cosmic X-ray satellite Hitomi, launched in February 2016, is equipped with the Hard X-ray Imager (HXI), which employs the DSSDs in 5-80 keV. In such a low energy band, the surface effect is non-negligible. When interstrip regions of p-side are irradiated, the DSSD sometimes show signals with negative pulse heights, presumably caused by positive surface charges between Si and SiO₂ layers.1{5 The effect modifies the X-ray response of the HXI towards its low-energy end, below ~ 10 keV. By irradiating the DSSD with uncollimated mono-energetic X-rays of different energies, we measured the fraction of the negative events to be 2% at 26.4 keV and 30% at 6.0 keV. Using an 8 keV colli- mated X-ray beam, we directly verified that the negative events originated from the interstrip gaps on the p-side where the SiO₂ layers exist. The measured energy- and position- dependences can be modeled by assuming that the negative events are produced in approximately 25 μm deep and 120 μm wide interstrip regions. When the bias voltage are halved (from 350 V to 180 V), fraction of the negative events increased by a factor of ~ 1:7, qualitatively consistent with this picture.

Conference Presentation

Citation Download Citation

Katsuma Miyake, Shinya Saito, Toshio Nakano, Koichi Hagino, Shogo Benjamin Kobayashi, Kazufumi Okuda, Taketo Miura, Goro Sato, Shin Watanabe, Motohide Kokubun, Kazuhiro Nakazawa, Shinichiro Takeda, Hiroyasu Tajima, Yasushi Fukazawa, and Tadayuki Takahashi "Effects on hard x-ray response of a double-sided Si strip detector caused by interstrip surface charge", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680D (30 September 2016); https://doi.org/10.1117/12.2240291

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available