Critical dimension performance and defect control on multi-etching

Chun Chieh Han

doi:10.1117/12.2641684

11 November 2022 Critical dimension performance and defect control on multi-etching

Chun Chieh Han

Proceedings Volume PC12293, Photomask Technology 2022; PC122930G (2022) https://doi.org/10.1117/12.2641684
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

In the research, we describe a method that can well control the mean-to-target (MTT) difference in the critical dimension (CD) of the reticle. It is called the multi-etched (or re-etched) process, re-etched process will separate the conventional dry-etched process into two steps. The major purpose of the first etching is takeout the absorber layer and get preliminary CD results (line/width are less than but close to the design target), and the function of the second etched process (re-etched) can precisely control CD results to match design target. On the re-etched process, not only MTT difference but also CD uniformity will be improved. Therefore, the re-etched process might be a method to well control CD performance (i.e., MTT and uniformity) of the reticle for mask shop application.

Conference Presentation

Citation Download Citation

Chun Chieh Han "Critical dimension performance and defect control on multi-etching", Proc. SPIE PC12293, Photomask Technology 2022, PC122930G (11 November 2022); https://doi.org/10.1117/12.2641684

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