Selective leading-edge mask writing and high-throughput mask writing in multi-beam mask writer MBM-2000PLUS

Haruyuki Nomura; Hiroshi Matsumoto; Keisuke Yamaguchi; Hayato Kimura; Noriaki Nakayamada

doi:10.1117/12.2641449

11 November 2022 Selective leading-edge mask writing and high-throughput mask writing in multi-beam mask writer MBM-2000PLUS

Haruyuki Nomura, Hiroshi Matsumoto, Keisuke Yamaguchi, Hayato Kimura, Noriaki Nakayamada

Author Affiliations +

Proceedings Volume PC12293, Photomask Technology 2022; PC122930I (2022) https://doi.org/10.1117/12.2641449
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

Multi-beam mask writer MBM-2000PLUS has been released for the 3nm+ technology node. It is designed with the capability of low dose sensitivity resist over 150 uC/cm^2 in the writing of leading-edge EUV and optical blanks without constraint by beam exposure time. Furthermore, taking advantage of multi-beam writing strategy and its high beam current density, ultra-high throughput writing is also available by selective pixel size. This selective pixel size will make it possible to product both leading edge and middle grade masks efficiently. In this paper, the relation between the pixel size, throughput and precision is discussed and demonstrated by writing experiments in MBM-2000PLUS.

Conference Presentation

Citation Download Citation

Haruyuki Nomura, Hiroshi Matsumoto, Keisuke Yamaguchi, Hayato Kimura, and Noriaki Nakayamada "Selective leading-edge mask writing and high-throughput mask writing in multi-beam mask writer MBM-2000PLUS", Proc. SPIE PC12293, Photomask Technology 2022, PC122930I (11 November 2022); https://doi.org/10.1117/12.2641449

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