The abundant intrinsic point defects of ZnO are an important factor affecting its photoelectric performance. Identification and quantification of point defects is important both for the luminescent and optoelectronic applications, as well as for understanding the microscopic of spontaneous resistive switching behavior. As a shallow acceptor defect, zinc vacancy (VZn) plays an important role in ZnO photoluminescence, resistive switching, and electroluminescence. However, it is difficult to regulate the behavior of VZn defects, which leads to unclear effects on the photoelectric properties of ZnO. In this work, the effects of different VZn defect behaviors on the photoelectric properties of acceptor-rich ZnO (A-ZnO) microrod/tubes devices were studied by adjusting the concentration of VZn defects.
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