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10 March 2023 Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cell (Conference Presentation)
Basile Roux
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Proceedings Volume PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII; PC124160K (2023) https://doi.org/10.1117/12.2650020
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Very-low bandgap thermophotovoltaic (TPV) cells (with ~0.25 eV bandgap) aiming at harvesting photons from the mid-infrared spectrum, have yet to operate at ambient temperature. Often requiring cooling down to 100K, the power consumption for maintaining such temperature can be treated as swimming against the efficiency tide. We propose in this study to adapt infrared photodetectors based on Ga-free type-II InAs/InAsSb superlattice (T2SL) barrier structure, into TPV cells, and assess their performances. Such structures have already demonstrated higher operating temperature as photodetectors, and could give promising results similar to existing devices based on InAs/GaSb T2SL while getting rid of Ga-native defects problematics.
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Citation Download Citation
Basile Roux "Transforming a type-II InAs/InAsSb superlattice MWIR photodetector into a thermophotovoltaic cell (Conference Presentation)", Proc. SPIE PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, PC124160K (10 March 2023); https://doi.org/10.1117/12.2650020
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KEYWORDS
Photodetectors
Mid-IR
Superlattices
Photons
Computer architecture
Cryogenics
Molecular beam epitaxy
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