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17 March 2023 Optical studies of implanted bismuth impurities in silicon towards single/few impurity devices
Steven K. Clowes, Benedict N. Murdin, Kristian Stockbridge, Tomas Peach, Nils Dressman
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Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC124300W (2023) https://doi.org/10.1117/12.2649091
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Donors in silicon is a potential scalable qubit platform for quantum technologies due the compatibility with existing microelectronic fabrication. Bismuth donors are particularly interesting due to their large nuclear spin and strong hyperfine coupling, manifesting as a 20-dimensional Hilbert space with a hyperfine splitting of 30.5 µeV which can be resolved without the application of a magnetic field. Fully scalable manufacturing of deterministically positioned donors can only be achieved through single ion implantation. Here we will present a review of our recent optical characterisation studies of implanted Bi donors which address the challenges of by the implantation route for the delivery of usable materials for quantum technologies.
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Steven K. Clowes, Benedict N. Murdin, Kristian Stockbridge, Tomas Peach, and Nils Dressman "Optical studies of implanted bismuth impurities in silicon towards single/few impurity devices", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300W (17 March 2023); https://doi.org/10.1117/12.2649091
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KEYWORDS
Bismuth
Silicon
Ion implantation
Ions
Magnetism
Manufacturing
Microelectronics
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