Anisotropic atomic layer etching of ruthenium with fluorination using fluorocarbon and hydrofluorocarbon

Yongjae Kim; Hojin Kang; Heeyeop Chae

doi:10.1117/12.2657412

30 April 2023 Anisotropic atomic layer etching of ruthenium with fluorination using fluorocarbon and hydrofluorocarbon

Yongjae Kim, Hojin Kang, Heeyeop Chae

Proceedings Volume PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII; PC124990E (2023) https://doi.org/10.1117/12.2657412
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

In this work, plasma ALE process was developed for ruthenium that involves plasma fluorination with C4F8 or CHF3 plasma and ion bombardment with Ar plasma in an inductively coupled plasma (ICP) reactor. Chemical sputtering threshold of C4F8 plasma is lower than that of CHF3 plasma owing to the higher F1s/C1s ratio fluorocarbon layers. The ALE window was confirmed with bias voltage of 150~210V. The etch per cycle (EPC) of ruthenium was determined to be 1.5 nm/cycle for C4F8 and 0.6 nm/cycle for CHF3. The EPC of ruthenium was self-limited with increasing Ar plasma etch time.

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Citation Download Citation

Yongjae Kim, Hojin Kang, and Heeyeop Chae "Anisotropic atomic layer etching of ruthenium with fluorination using fluorocarbon and hydrofluorocarbon", Proc. SPIE PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII, PC124990E (30 April 2023); https://doi.org/10.1117/12.2657412

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KEYWORDS

Plasma

Ruthenium

Etching

Anisotropic etching

Argon

Copper

Focus stacking software

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