The continued acceleration in dimensional scaling of logic and memory semiconductor devices requires the integration of more emerging multifunctional materials, which demand more complex and aggressive chemical processes, thereby heightening the environmental, health and safety risks. To realize the sustainability in etch and patterning integration, a three pronged approach must be undertaken. First, new alternative gases must be developed to replace hydrofluorocarbon (HFC) gases. Next, mitigating strategies must be developed to minimize any downstream reaction that can cause serious health and safety incidents. Finally, non-HFC/non-halogen etch chemistries must be tested to demonstrate feasibility in patterning nano-scale structures.
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