Ultimate resolution challenge for high-precision EUV mask by using MBMW technology

Shingo Yoshikawa; Tsukasa Abe; Yukihiro Fujimura; Mei Ebisawa; Izumi Hotei; Issei Sakai; Masataka Yamaji; Yasutaka Morikawa; Tatsuya Tomita; Koji Ichimura; Naoya Hayashi

doi:10.1117/12.2688952

22 November 2023 Ultimate resolution challenge for high-precision EUV mask by using MBMW technology

Shingo Yoshikawa, Tsukasa Abe, Yukihiro Fujimura, Mei Ebisawa, Izumi Hotei, Issei Sakai, Masataka Yamaji, Yasutaka Morikawa, Tatsuya Tomita, Koji Ichimura, Naoya Hayashi

Author Affiliations +

Proceedings Volume PC12751, Photomask Technology 2023; PC127510U (2023) https://doi.org/10.1117/12.2688952
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

In semiconductor manufacturing for the 3nm node, 2nm node and beyond generations, Extreme ultraviolet lithography (EUVL) is an essential technology, and within that, photomask technology plays an important role. Currently, photomasks for EUVL are manufactured with a multi beam mask writer (MBMW) that uses over 200,000 electron beams to achieve high efficiency and high precision. However, it is said that the chemical amplification resist for EB lithography has already reached its limit, and forming a 10nm pattern on a mask is extremely difficult. Last year, We reported mask development using Ultra High Resolution CAR resists. In this report, we present the latest mask development status using chemical amplification resists and alternative resists to achieve even higher resolution.

Conference Presentation

Citation Download Citation

Shingo Yoshikawa, Tsukasa Abe, Yukihiro Fujimura, Mei Ebisawa, Izumi Hotei, Issei Sakai, Masataka Yamaji, Yasutaka Morikawa, Tatsuya Tomita, Koji Ichimura, and Naoya Hayashi "Ultimate resolution challenge for high-precision EUV mask by using MBMW technology", Proc. SPIE PC12751, Photomask Technology 2023, PC127510U (22 November 2023); https://doi.org/10.1117/12.2688952

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