My Subscription | My Email Alerts | My Article Collections

BROWSE PROCEEDINGS

Proceedings

BROWSE JOURNALS

Journals

BROWSE SPIE eBOOKS

SPIE eBooks

SUBSCRIPTIONS & PRICING

GENERAL INFORMATION

chapter 2, EUV Source Requirements for EUV Lithography

In Section I: Introduction and Technology Review from: EUV Sources for Lithography

Editor(s): Vivek Bakshi

Author(s): Kazuya Ota, Yutaka Watanabe, Vadim Banine, Hans Franken

Published: 23 February 2006

Chapter DOI: http://dx.doi.org/10.1117/3.613774.ch2

Chapter Page Count: 17 pages

Previous Chapter | Next Chapter

Front Matter

Section I: Introduction and Technology Review
1. EUV Source Technology: Challenges and Status

2. EUV Source Requirements for EUV Lithography

Section II: Fundamentals and Modeling
3. Atomic Xenon Data

4. Atomic Tin Data

5. Atomic Physics of Highly Charged Ions and the Case for Sn as a Source Material

6. Radiative Collapse in Z Pinches

7. Fundamentals and Limits of Plasma-Based EUV Sources

8. Z* Code for DPP and LPP Source Modeling

9. HEIGHTS-EUV Package for DPP Source Modeling

10. Modeling LPP Sources

11. Conversion Efficiency of LPP Sources

Section III: Plasma Pinch Sources
12. Dense Plasma Focus Source

13. Hollow-Cathode-Triggered Plasma Pinch Discharge

14. High-Power GDPP Z-Pinch EUV Source Technology

15. Star Pinch EUV Source

16. Xenon and Tin Pinch Discharge Sources

17. Capillary Z-Pinch Source

18. Plasma Capillary Source

Section IV: Laser-Produced Plasma (LPP) Sources
19. Technology for LPP Sources

20. Spatially and Temporally Multiplexed Laser Modules for LPP Sources

21. Modular LPP Source

22. Driver Laser, Xenon Target, and System Development for LPP Sources

23. Liquid-Xenon-Jet LPP Source

24. LPP Source Development and Operation in the Engineering Test Stand

25. Xenon Target and High-Power Laser Module Development for LPP Sources

26. Laser Plasma EUV Sources Based on Droplet Target Technology

Section V: EUV Source Metrology
27. Flying Circus EUV Source Metrology and Source Development Assessment

28. Plasma Diagnostic Techniques

29. Metrology for EUVL Sources and Tools

30. Calibration of Detectors and Tools for EUV-Source Metrology

Section VI: Other Types of EUV Sources
31. Electron-Based EUV Sources for At-Wavelength Metrology

32. Synchrotron Radiation Sources for EUVL Applications

Section VII: EUV Source Components
33. Grazing-Incidence EUV Collectors

34. Collection Efficiency of EUV Sources

35. Electrode and Condenser Materials for Plasma Pinch Sources

36. Origin of Debris in EUV Sources and Its Mitigation

37. Erosion of Condenser Optics Exposed to EUV Sources

38. Potential Energy Sputtering of EUVL Materials

Back Matter

Preview

Chapter Contents

2.1 Introduction and Background
2.2 Source Requirements
2.3 Component Degradation
2.4 Cost of Ownership
2.5 Conclusions
Acknowledgments
References

Excerpt

2.1 Introduction and Background

2.1.1 Joint specifications

Joint specifications for EUV sources were first presented by ASML, Canon, and Nikon in February 2002 to accelerate source development by source suppliers, and the joint specifications have been updated periodically. The latest requirements are shown in Table 2.1, which was presented at the EUV Source Workshop in Miyazaki (Japan) on November 5, 2004.

These specifications are defined at∕after the intermediate focus (IF), which is explained in the next subsection. Table 2.2 shows how major requirements changed from 2002 to 2004. Requirements for wavelength, EUV inband power, and etendue of source output were agreed on at the workshop, but requirements for repetition frequency and maximum solid angle input to illuminator are not yet agreed on, because they depend on the tool design.

2.1.2 Definition of EUV source

Two kinds of plasmas emit EUV light: laser-produced plasma (LPP) and gas-discharge plasma (GDP). There are various types of GDPs according to the arrangement of the electrodes. Furthermore, several materials (Xe, Sn, etc.) are used for the plasma. Thus, even if only the plasma is considered, there are many potential candidates for the EUV source to be used for high-volume manufacturing (HVM). Collector optics is used to collect EUV light that radiates from the plasma and to focus the light at the IF. There are two kinds of mirror for the collector: the normal-incidence multilayer mirror and the grazing-incidence total-reflection mirror. Furthermore, there are many types of collector that are being developed.

http://dx.doi.org/10.1117/3.613774.ch2

Your library does not subscribe to the eBooks portion of the SPIE Digital Library.