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Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
J. Micro/Nanolith. MEMS MOEMS 10, 043002 (Oct 04, 2011); http://dx.doi.org/10.1117/1.3643480
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Add to FacebookIn this study, a simple technique was introduced for the fabrication of nanogap electrodes by using nano-oxidation scanning probe microscopy lithography with a Cr/Pt coated silicon tip. Silicon electrodes with a gap of sub-31 nm were fabricated successfully by this technique. The current-voltage measurements (I-V) of the electrodes demonstrated excellent insulating characteristics. This technique is simple, controllable, inexpensive, and faster than common methods. The results showed that silicon electrodes have a great potential for the fabrication of single molecule transistors, single electron transistors, and other nanoelectronic devices.
© 2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
History
Received May 07, 2011
Accepted Sep 02, 2011
Revised Jul 28, 2011
Published online Oct 04, 2011
Accepted Sep 02, 2011
Revised Jul 28, 2011
Published online Oct 04, 2011
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Citation
Jalal Rouhi, Shahrom Mahmud, Sabar Derita Hutagalung and Saeid Kakooei, "Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography",
J. Micro/Nanolith. MEMS MOEMS 10, 043002 (Oct 04, 2011); http://dx.doi.org/10.1117/1.3643480
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